The Infineon Technologies IRGB5B120KD is a NPT IGBT (Insulated Gate Bipolar Transistor) with a maximum current collector of 12A and a maximum power dissipation of 89W.

• Mounting: Through-Hole
• Package: TO-220AB
• Reverse Recovery Time: 160ns
• Input Type: Standard
• Gate Charge: 25nC
• Collector-Emitter Saturation Voltage: 3V @ 15V, 6A
• Turn-On Delay Time: 22ns
• Turn-Off Delay Time: 100ns
• Total Switching Energy (on): 390μJ
• Total Switching Energy (off): 330μJ
• Testing Conditions: 600V, 6A, 50 Ohm, 15V

The IGBT is categorized under discrete semiconductor products and has a medium popularity.