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Same model may have multiple batches, images only for reference.
IRG7S313UTRLPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRG7S313UTRLPBF

Part No IRG7S313UTRLPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 330V 40A 78W D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 330V
Maximum Current Collector 40A
Collector-emitter saturation voltage(Max) 2.14V @ 15V, 60A
Maximum Power Dissipation 78W
Input Type Standard
Gate Charge 33nC
Turn-on and Turn-off delay time 1ns/65ns
Testing Conditions 196V, 12A, 10 Ohm
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 119741-IRG7S313UTRLPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRG7S313UTRLPBF CAD Model

Description

The Infineon Technologies IGBT (Insulated Gate Bipolar Transistor) is an electronically controlled power semiconductor device that is widely used in switching applications like variable frequency drives, uninterruptible power supplies, and welding equipment.

  • IGBT Type: Trench
  • Maximum Collector-Emitter Breakdown Voltage: 330V
  • Maximum Current Collector: 40A
  • Gate Charge: 33nC
  • Collector-Emitter Saturation Voltage: 2.14V @ 15V, 60A
  • Case/Package: D2PAK
  • Maximum Power Dissipation: 78W
  • Temperature Range: -40°C to 150°C (TJ)

This device is ideal for industrial applications and is available in a cut reel packaging format.

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