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Same model may have multiple batches, images only for reference.
IRG7PH35UPBF Real Image
Same model may have multiple batches, images only for reference.

IRG7PH35UPBF

Part No IRG7PH35UPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 55A 210W TO247AC / IGBT Trench 1200 V 55 A 210 W Through Hole TO-247AC
Datasheet
IRG7PH35UPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Tube
Product Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 55 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
Power - Max 210 W
Switching Energy 1.06mJ (on), 620µJ (off)
Input Type Standard
Gate Charge 85 nC
Td (on/off) @ 25°C 30ns/160ns
Test Condition 600V, 20A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AC
Base Product Number IRG7PH
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001545868
Standard Package 25
Win Source Part Number 1196174-IRG7PH35UPBF
Ultra Librarian 3D Model Ultra Librarian IRG7PH35UPBF CAD Model

Description

The Infineon Technologies IRG7PH35UPBF is a trench IGBT type transistor that is designed for high power applications.

  • Maximum Power: 210 W
  • Maximum Collector Current: 55 A
  • Switching Energy (on): 1.06mJ
  • Switching Energy (off): 620μJ
  • Gate Charge: 85 nC

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