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Same model may have multiple batches, images only for reference.
IRG4PSH71KDPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4PSH71KDPBF

Part No IRG4PSH71KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 1200V 78A 350000mW 3-Pin(3+Tab) TO-274AA Tube / IGBT 1200V 78A 350W SUPER247
Datasheet
IRG4PSH71KDPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 78A
Pulsed Collector Current 156A
Collector-emitter saturation voltage(Max) 3.9V @ 15V, 42A
Maximum Power Dissipation 350W
Total Switching Energy(Ets) 5.68mJ (on), 3.23mJ (off)
Input Type Standard
Gate Charge 410nC
Turn-on and Turn-off delay time 67ns/230ns
Testing Conditions 800V, 42A, 5 Ohm, 15V
Reverse Recovery Time (trr) 107ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package SUPER-247 (TO-274AA)
Win Source Part Number 016640-IRG4PSH71KDPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRG4PSH71KD
Introduction Date September 20, 2004
ECCN EAR99
Country of Origin Mexico
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRG4PSH71KDPBF CAD Model

Description

The Infineon Technologies 016640-IRG4PSH71KDPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for use in various power switching applications.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 78A
  • Reverse Recovery Time: 107ns
  • Gate Charge: 410nC
  • Total Switching Energy: 5.68mJ (on) and 3.23mJ (off)
  • Turn-On and Turn-Off Delay Time: 67ns and 230ns
  • Package: SUPER-247 (TO-274AA)
  • Mounting Type: Through-Hole
  • Temperature Range: -55°C to 150°C (TJ)
  • Estimated EOL Date: Obsolete/End of Life
  • Popularity: High

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