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IRG4PH40UD2-E

Name: IRG4PH40UD2-E
Brand: Infineon Technologies
SKU: 161208
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRG4PH40UD2-E
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	IGBT 1200V 41A 160W TO247AD
Datasheet	IRG4PH40UD2-E Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Bulk
Status	Active
VCEO Maximum Collector-Emitter Breakdown Voltage	1200V
Maximum Current Collector	41A
Pulsed Collector Current	82A
Collector-emitter saturation voltage(Max)	3.1V @ 15V, 21A
Maximum Power Dissipation	160W
Total Switching Energy(Ets)	1.95mJ (on), 1.71mJ (off)
Input Type	Standard
Gate Charge	100nC
Turn-on and Turn-off delay time	22ns/100ns
Testing Conditions	800V, 21A, 10 Ohm, 15V
Reverse Recovery Time (trr)	50ns
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-247AD
Win Source Part Number	205432-IRG4PH40UD2-E
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRG4PH40UD2-E CAD Model

Description

The Infineon IRG4PH40UD2-E is an IGBT transistor with a maximum power dissipation of 160W and a collector-emitter breakdown voltage of 1200V.

Maximum Current Collector: 41A
Collector-Emitter Saturation Voltage: 3.1V @ 15V, 21A
Mounting Type: Through Hole
Packaging: Bulk
Popularity: Medium
Supply and Demand Status: Limited

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
5+	$10.9090	$54.5450
12+	$8.9510	$107.4120
18+	$8.6713	$156.0834
24+	$8.3916	$201.3984
31+	$8.1119	$251.4689
42+	$7.2727	$305.4534

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 5,880 pieces

MOQ: 5 pcs

Order Increment : 1 pcs

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