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IRG4PH20KDPBF

Part No IRG4PH20KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 11A 60W TO247AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 11A
Pulsed Collector Current 22A
Collector-emitter saturation voltage(Max) 4.3V @ 15V, 5A
Maximum Power Dissipation 60W
Total Switching Energy(Ets) 620μJ (on), 300μJ (off)
Input Type Standard
Gate Charge 28nC
Turn-on and Turn-off delay time 50ns/100ns
Testing Conditions 800V, 5A, 50 Ohm, 15V
Reverse Recovery Time (trr) 51ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 138311-IRG4PH20KDPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4PH20KDPBF CAD Model

Description

The Infineon Technologies 138311-IRG4PH20KDPBF is a high-performance IGBT transistor designed to operate in through-hole mounting.

  • Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 11A
  • Input Type: Standard
  • Gate Charge: 28nC
  • Reverse Recovery Time: 51ns
  • Package: TO-247AC
  • Maximum Power Dissipation: 60W
  • Collector-Emitter Saturation Voltage: 4.3V @ 15V, 5A
  • Turn-On and Turn-Off Delay Time: 50ns/100ns

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.1385 $57.9390
35+ $3.3957 $118.8495
53+ $3.2897 $174.3541
73+ $3.1836 $232.4028
94+ $3.0774 $289.2756
126+ $2.7591 $347.6466
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Availability: 7,500 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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