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Same model may have multiple batches, images only for reference.
IRG4BC40FPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4BC40FPBF

Part No IRG4BC40FPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 49A 160W TO220AB
Datasheet
IRG4BC40FPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 49A
Pulsed Collector Current 196A
Collector-emitter saturation voltage(Max) 1.7V @ 15V, 27A
Maximum Power Dissipation 160W
Total Switching Energy(Ets) 370μJ (on), 1.81mJ (off)
Input Type Standard
Gate Charge 100nC
Turn-on and Turn-off delay time 26ns/240ns
Testing Conditions 480V, 27A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 069637-IRG4BC40FPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4BC40FPBF CAD Model

Description

The Infineon Technologies IGBT (Insulated Gate Bipolar Transistor) is a high-performance device designed for use in a wide range of applications.

  • Maximum Current Collector: 49A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Package: TO-220AB
  • Maximum Power Dissipation: 160W
  • Collector-Emitter Saturation Voltage (Max): 1.7V @ 15V, 27A
  • Total Switching Energy (Ets) (on): 370μJ
  • Total Switching Energy (Ets) (off): 1.81mJ
  • Turn-On Delay Time: 26ns
  • Turn-Off Delay Time: 240ns
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Supply and Demand Status: Balanced

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