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IRG4BC30WPBF Infineon Technologies IRG4BC30WPBF Real Image
Same model may have multiple batches, images only for reference.
IRG4BC30WPBF Infineon Technologies IRG4BC30WPBF Real Image
IRG4BC30WPBF Infineon Technologies IRG4BC30WPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4BC30WPBF

Part No IRG4BC30WPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 23A 100W TO220AB
Datasheet
IRG4BC30WPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 23A
Pulsed Collector Current 92A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 12A
Maximum Power Dissipation 100W
Total Switching Energy(Ets) 130μJ (on), 130μJ (off)
Input Type Standard
Gate Charge 51nC
Turn-on and Turn-off delay time 25ns/99ns
Testing Conditions 480V, 12A, 23 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 135333-IRG4BC30WPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4BC30WPBF CAD Model

Description

The Infineon Technologies 135333-IRG4BC30WPBF is a through hole mounted IGBT transistor.

  • Mounting: Through Hole
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 23A
  • Gate Charge: 51nC
  • Total Switching Energy (on): 130μJ
  • Total Switching Energy (off): 130μJ
  • Package: TO-220AB
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 100W
  • Pulsed Collector Current: 92A
  • Collector-Emitter Saturation Voltage (Max): 2.7V @ 15V, 12A
  • Turn-On Delay Time: 25ns
  • Turn-Off Delay Time: 99ns
  • Popularity: Medium

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