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Same model may have multiple batches, images only for reference.
IRG4BC30FD-STRR Real Image
Same model may have multiple batches, images only for reference.

IRG4BC30FD-STRR

Part No IRG4BC30FD-STRR
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 31A 100W D2PAK
Datasheet
IRG4BC30FD-STRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 31A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 1.8V @ 15V, 17A
Maximum Power Dissipation 100W
Total Switching Energy(Ets) 630μJ (on), 1.39mJ (off)
Input Type Standard
Gate Charge 51nC
Turn-on and Turn-off delay time 42ns/230ns
Testing Conditions 480V, 17A, 23 Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 1047289-IRG4BC30FD-STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4BC30FD-STRR CAD Model

Description

The Infineon Technologies 1047289-IRG4BC30FD-STRR is an IGBT (Insulated Gate Bipolar Transistor) that is designed for use in a variety of applications, including motor control, power supplies, and lighting.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 31A
  • Maximum Power Dissipation: 100W
  • Reverse Recovery Time: 42ns
  • Gate Charge: 51nC
  • Collector-Emitter Saturation Voltage: 1.8V @ 15V, 17A
  • Package: D2PAK
  • Mounting Technology: SMD (SMT)
  • Status: Obsolete (EOL)
  • Popularity: Medium

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210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
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