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Same model may have multiple batches, images only for reference.
IRG4BC20FD Infineon Technologies
Same model may have multiple batches, images only for reference.

IRG4BC20FD

Part No IRG4BC20FD
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) | IGBT 600V 16A 60W TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 16A
Current - Collector Pulsed (Icm) 64A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 9A
Maximum Power 60W
Switching Energy 250μJ (on), 640μJ (off)
Input Type Standard
Gate Charge 27nC
Td (on/off) at 25°C 43ns/240ns
Test Condition 480V, 9A, 50Ohm, 15V
Reverse Recovery Time (trr) 37ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188220-IRG4BC20FD
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4BC20FD CAD Model

Description

The supply and demand status is limited. This component is manufactured by Infineon Technologies and has a Win Source Part Number of 1188220-IRG4BC20FD.

  • Mounting: through-hole
  • Maximum Power: 60W
  • Reverse Recovery Time (trr): 37ns
  • IGBT Type: not specified
  • Current Collector Pulsed (Icm): 64A
  • Switching Energy: 250μJ (on), 640μJ (off)
  • Gate Charge: 27nC
  • Vce(on) (Maximum) @ Vge, Ic: 2V @ 15V, 9A
  • Use: discrete semiconductor products

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