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Same model may have multiple batches, images only for reference.
IRFSL4410 Real Image
Same model may have multiple batches, images only for reference.

IRFSL4410

Part No IRFSL4410
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 100V 96A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 96A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 10mOhm at 58A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 150μA
Gate Charge (Qg) (Maximum) at Vgs 180nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5150pF at 50V
Power Dissipation (Maximum) 250W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188052-IRFSL4410
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFSL4410 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance transistor designed for use in various applications, including power management, communications, and networking.

  • Transistor Type: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 100V
  • Id - Continuous Drain Current: 96A
  • Rds On (Maximum) @ Id, Vgs: 10mOhm @ 58A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 150μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 5150pF @ 50V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Power Dissipation (Maximum): 250W
  • Status: Obsolete
  • Status: Limited supply and demand

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