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IRFR1205

Part No IRFR1205
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A⑤) | MOSFET N-CH 55V 44A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 44A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 27mOhm at 26A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 65nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1300pF at 25V
Power Dissipation (Maximum) 107W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1187861-IRFR1205
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR1205 CAD Model

Description

The Infineon Technologies 512770 MOSFET is a high-power N-channel transistor that is designed for use in discrete semiconductor products.

  • Power Dissipation: 107W
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 44A
  • Maximum Rds On: 27mOhm @ 26A and 10V
  • Gate-Source Voltage (th): 4V @ 250μA
  • Gate Charge (Qg): 65nC @ 10V
  • Input Capacitance (Ciss): 1300pF @ 25V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63 package
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3730 $57.8150
335+ $0.3490 $116.9150
515+ $0.3370 $173.5550
740+ $0.3129 $231.5460
960+ $0.3009 $288.8640
1,200+ $0.2888 $346.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,920 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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