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IRFP048N

Part No IRFP048N
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A) | MOSFET N-CH 55V 64A TO-247AC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 64A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 16mOhm at 37A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 89nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1900pF at 25V
Power Dissipation (Maximum) 140W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-247AC
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1187751-IRFP048N
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFP048N CAD Model

Description

The Infineon Technologies 1187751-IRFP048N is an N-channel MOSFET transistor with a Vds of drain-source breakdown voltage of 55V and a continuous drain current of 64A. 1187751-IRFP048N is manufactured by Infineon Technologies.

  • Channel Type: N-channel MOSFET
  • Vds (Drain-Source Breakdown Voltage): 55V
  • Continuous Drain Current: 64A
  • Package: TO-247AC
  • Status: Obsolete
  • Temperature Range: -55°C ~ 175°C
  • Power Dissipation (Maximum): 140W
  • Applications: Power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0591 $58.2505
135+ $0.8697 $117.4095
210+ $0.8420 $176.8200
285+ $0.8154 $232.3890
370+ $0.7877 $291.4490
495+ $0.7069 $349.9155
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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