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IRFL014NPBF Real Image IRFL014NPBF real image11748
Same model may have multiple batches, images only for reference.
IRFL014NPBF Real Image IRFL014NPBF real image11748
IRFL014NPBF Real Image IRFL014NPBF real image11748
Same model may have multiple batches, images only for reference.

IRFL014NPBF

Part No IRFL014NPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 55V 1.9A SOT223
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 1.9A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 160mOhm at 1.9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 190pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-223
Manufacturer Package TO-261-4, TO-261AA
Manufacturer Pack Quantity 1,760
MSL Level 1 (Unlimited)
Win Source Part Number 1187713-IRFL014NPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFL014NPBF CAD Model

Description

The Infineon Technologies IRFL014NPBF is a N-channel MOSFET transistor, designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 1.9A
  • Maximum Rds On: 160mOhm @ 1.9A and 10V
  • Gate-Source Voltage(th) (maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 11nC @ 10V
  • Package: TO-261-4, TO-261AA
  • Power Dissipation (maximum): 1W
  • Supply and demand status: limited

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