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IRFIZ48N

Part No IRFIZ48N
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A) | MOSFET N-CH 55V 36A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 36A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 16mOhm at 22A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 89nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1900pF at 25V
Power Dissipation (Maximum) 42W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB Full-Pak
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187709-IRFIZ48N
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFIZ48N CAD Model

Description

The IRFIZ48N is an N-channel MOSFET with a maximum drain-source breakdown voltage of 55V and a continuous drain current of 36A, manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 42W
  • Input Capacitance: 1900pF @ 25V
  • Product Type: Discrete Semiconductor
  • Status: Obsolete
  • Package: TO-220AB Full-Pak
  • Popularity: Medium
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3905 $62.5725
105+ $1.1411 $119.8155
160+ $1.1053 $176.8480
220+ $1.0697 $235.3340
280+ $1.0341 $289.5480
375+ $0.9270 $347.6250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,300 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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