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Same model may have multiple batches, images only for reference.
IRFI9Z34N Real Image
Same model may have multiple batches, images only for reference.

IRFI9Z34N

Part No IRFI9Z34N
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET (-55V, 0.1ohm, -14A) | MOSFET P-CH 55V 14A TO-220FP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 14A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 100mOhm at 7.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 35nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 620pF at 25V
Power Dissipation (Maximum) 37W
Mounting Style Through Hole
Supplier Device Package TO-220AB Full-Pak
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187683-IRFI9Z34N
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI9Z34N CAD Model

Description

The Infineon Technologies IRFI9Z34N is a P-channel MOSFET transistor featuring a TO-220AB full-pak supplier device package.

  • Drive Voltage (max Rds on, min Rds on): 10V
  • Vds - Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 14A
  • Rds On (maximum) @ Id, Vgs: 100mOhm @ 7.8A, 10V
  • Gate Source Voltage (th) (maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 620pF @ 25V

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