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Same model may have multiple batches, images only for reference.
IRFB41N15D Real Image
Same model may have multiple batches, images only for reference.

IRFB41N15D

Part No IRFB41N15D
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) | MOSFET N-CH 150V 41A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 150V
Id - Continuous Drain Current 41A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 45mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2520pF at 25V
Power Dissipation (Maximum) 200W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187502-IRFB41N15D
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFB41N15D CAD Model

Description

The Infineon Technologies IRFB41N15D is an N-channel MOSFET transistor with a drain-source breakdown voltage of 150V and a continuous drain current of 41A.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 41A
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 45mOhm @ 25A and 10V
  • Package: TO-220AB case
  • Mounting: Through a hole
  • Status: Obsolete
  • Power Dissipation: 200W
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Input Capacitance: 2520pF @ 25V
  • Supply and Demand Status: Sufficient
  • Manufacturer Pack Quantity: 50

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