The Infineon Technologies IRFB3607GPBF is an N-channel MOSFET transistor with a drain-source breakdown voltage of 75V and a continuous drain current of 80A at 25°C.

• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On: 9 mOhm @ 46A, 10V
• Case/Package: TO-220AB
• Mounting Type: Through Hole
• Lifecycle Status: Obsolete (EOL)
• Power Dissipation (Max): 140W (Tc)
• Gate-Source Threshold Voltage: 4V @ 100μA
• Maximum Gate Charge: 84nC @ 10V
• Maximum Input Capacitance: 3070pF @ 50V
• Supply and Demand Status: Sufficient
• Quantity Per Package: 50