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IRF9952TR Real Image

Same model may have multiple batches, images only for reference.

IRF9952TR Real Image

Same model may have multiple batches, images only for reference.

IRF9952TR

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Part No	IRF9952TR
Manufacturer	Infineon Technologies
Catalog	FETs - Arrays
Description	MOSFET N/P-CH 30V 8-SOIC
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tape and Reel
Status	Obsolete
Transistor Polarity	N and P-Channel
FET Feature	Logic Level Gate
Vds - Drain-Source Breakdown Voltage	30V
Id - Continuous Drain Current	3.5A, 2.3A
Rds On (Maximum) at Id, Vgs	100mOhm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id	1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	14nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds	190pF at 15V
Maximum Power	2W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Manufacturer Package	8-SOIC
Supplier Device Package	8-SO
Manufacturer Pack Quantity	4,000
MSL Level	1 (Unlimited)
Win Source Part Number	718716-IRF9952TR
Popularity	Low
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian IRF9952TR CAD Model

Description

The Infineon Technologies IRF9952TR is an obsolete electronic component designed for power applications. Infineon Technologies

Drain-Source Breakdown Voltage: 30V
Continuous Drain Current: 3.5A
Package: 8-SOIC
Supply and Demand Status: sufficient
Ideal for: N and P-Channel transistor polarity applications

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
200+	$0.2896	$57.9200
490+	$0.2377	$116.4730
755+	$0.2302	$173.8010
1,040+	$0.2228	$231.7120
1,345+	$0.2154	$289.7130
1,795+	$0.1931	$346.6145

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 36,300 pieces

MOQ: 200 pcs

Order Increment : 1 pcs

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