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IRF9952

Part No IRF9952
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description Power MOSFET(Vdss=+-30V) | MOSFET N/P-CH 30V 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N and P-Channel
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 3.5A, 2.3A
Rds On (Maximum) at Id, Vgs 100mOhm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 190pF at 15V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Manufacturer Pack Quantity 95
MSL Level 1 (Unlimited)
Win Source Part Number 1187464-IRF9952
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9952 CAD Model

Description

The Infineon Technologies IRF9952 is an electronic component that is manufactured by Infineon Technologies.

  • Win Source Part Number: 1187464-IRF9952
  • Applications: power management and lighting
  • Type: N and P-Channel MOSFET transistor
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.5A and 2.3A
  • Gate-Source Voltage (th): 1V @ 250μA
  • Gate Charge (Qg): 14nC @ 10V
  • Input Capacitance (Ciss): 190pF @ 15V
  • Supply and Demand Status: balanced
  • Package: 8-SOIC
  • Maximum Power: 2W
  • Maximum Rds on: 100mOhm @ 2.2A, 10V
  • Reliability: reliable and long-lasting component that is suitable for use in demanding environments

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3878 $58.1700
365+ $0.3183 $116.1795
565+ $0.3084 $174.2460
775+ $0.2985 $231.3375
1,005+ $0.2884 $289.8420
1,340+ $0.2586 $346.5240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,473 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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