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Same model may have multiple batches, images only for reference.
IRF8910GPBF Real Image
Same model may have multiple batches, images only for reference.

IRF8910GPBF

Part No IRF8910GPBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET 2N-CH 20V 10A 8-SO / Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Packaging Tube
Part Status Obsolete (End Of Life)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 10A
Rds On (Maximum) at Id, Vgs 13.4mOhm at 10A, 10V
Vgs(th) (Maximum) at Id 2.55V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 960pF at 10V
Power - Max 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Part Number Series IRF8910GPBF
Manufacturer Pack Quantity 95
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803257-IRF8910GPBF
Ultra Librarian 3D Model Ultra Librarian IRF8910GPBF CAD Model

Description

The Infineon Technologies IRF8910GPBF is a dual N-channel logic level gate FET.

  • Drain to Source Voltage: 20V
  • Power Rating: 2W
  • Continuous Drain Current @ 25°C: 10A
  • Gate Charge @ 4.5V: 11nC
  • Input Capacitance @ 10V: 960pF
  • Rds On: 13.4mOhm @ 10A and 10V
  • Package: 8-SO
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4338 $50.1830
85+ $1.1765 $100.0025
135+ $1.1397 $153.8595
185+ $1.1030 $204.0550
235+ $1.0662 $250.5570
315+ $0.9559 $301.1085
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Availability: 150 pieces
MOQ: 35 pcs
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