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Same model may have multiple batches, images only for reference.
IRF7807Z Real Image
Same model may have multiple batches, images only for reference.

IRF7807Z

Part No IRF7807Z
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 30V 11A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 13.8mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.25V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 770pF at 15V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 95
MSL Level 1 (Unlimited)
Win Source Part Number 1187357-IRF7807Z
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7807Z CAD Model

Description

The IRF7807Z is a MOSFET transistor manufactured by Infineon Technologies.

  • Application: Power Management, Communications, Networking, Industrial, Computers, Computer Peripherals
  • Mounting Style: 8-SO
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 11A
  • Maximum Power Dissipation: 2.5W
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Voltage Threshold: 2.25V @ 250μA
  • Maximum Gate Charge: 11nC @ 4.5V
  • Input Capacitance: 770pF @ 15V
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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