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IRF7473PBF

Part No IRF7473PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 100V 6.9A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 6.9A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 26mOhm at 4.1A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 61nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3180pF at 25V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187300-IRF7473PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7473PBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance electronic component designed for use in a wide range of applications.

  • Manufacturer: Infineon Technologies
  • Drive Voltage: Up to 10V
  • Temperature Range: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 6.9A
  • Input Capacitance: 3180pF @ 25V
  • Gate Charge: 61nC @ 10V
  • Package: 8-SOIC
  • Power Dissipation: 2.5W
  • Popularity: Medium
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4926 $52.3890
35+ $2.8657 $100.2995
55+ $2.7762 $152.6910
75+ $2.6866 $201.4950
97+ $2.5971 $251.9187
129+ $2.3284 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,200 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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