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IRF7457PBF

Part No IRF7457PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 20V 15A 8-SOIC / HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 7.0mΩ , ID = 15A )
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 15A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 7mOhm at 15A, 10V
Vgs(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 42nC at 4.5V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3100pF at 10V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803789-IRF7457PBF
Ultra Librarian 3D Model Ultra Librarian IRF7457PBF CAD Model

Description

The Infineon Technologies IRF7457PBF is an N-channel MOSFET designed for use in surface mount applications.

  • Drain to Source Voltage: 20V
  • Maximum Continuous Drain Current: 15A @ 25°C
  • Gate-Source Voltage (Maximum): ±20V
  • Maximum Power Dissipation: 2.5W
  • On-Resistance: 7mOhm @ 15A, 10V
  • Gate Charge: 42nC @ 4.5V
  • Package: 8-SO
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.0755 $60.9060
28+ $4.1645 $116.6060
43+ $4.0344 $173.4792
60+ $3.9043 $234.2580
77+ $3.7741 $290.6057
103+ $3.3837 $348.5211
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,460 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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