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IRF7451TR

Part No IRF7451TR
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 150V 3.6A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 150V
Id - Continuous Drain Current 3.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 90mOhm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 41nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 990pF at 25V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Win Source Part Number 714555-IRF7451TR
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7451TR CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel transistor designed for use in a variety of electronic applications.

  • Breakdown Voltage: 150V
  • Continuous Drain Current: 3.6A
  • Rds On: 90mOhm @ 2.2A, 10V
  • Gate Charge: 41nC @ 10V
  • Input Capacitance: 990pF @ 25V
  • Package: 8-SOIC
  • Mounting Type: Surface Mount
  • Maximum Gate Source Voltage: ±30V
  • Gate Source Voltage(th): 5.5V @ 250μA
  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 2.5W
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3538 $51.3010
305+ $0.3314 $101.0770
470+ $0.3202 $150.4940
675+ $0.2978 $201.0150
875+ $0.2866 $250.7750
1,090+ $0.2754 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 97,010 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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