The IRF7411 is a P-Channel HEXFET® Power MOSFET from Infineon Technologies. It is designed for a wide range of power management applications, offering high efficiency and low on-resistance. This MOSFET is particularly well-suited for load switching, DC-DC converters, and power inverters. Its compact size and excellent thermal performance make it an ideal choice for space-constrained applications.

Applications

• Load Switching
• DC-DC Converters
• Power Inverters
• Power Management in Portable Devices
• Motor Control

Features

• P-Channel MOSFET
• Low On-Resistance (RDS(on))
• High Avalanche Ruggedness
• Logic-Level Gate Drive
• Surface Mount Package (SO-8)
• Lead-Free

Benefits

• High Efficiency: The low on-resistance minimizes power losses, resulting in higher efficiency in power conversion applications.
• Simplified Gate Drive: Logic-level gate drive simplifies the design of gate drive circuits, reducing component count and cost.
• Robust Performance: High avalanche ruggedness ensures reliable operation in demanding applications.
• Compact Size: The SO-8 package allows for dense board layouts, making it suitable for portable and space-constrained applications.
• Environmentally Friendly: Lead-free construction complies with environmental regulations.

Technical Specifications

The IRF7411 has a drain-source voltage (VDS) of -40V and a continuous drain current (ID) of -6.9A. The on-resistance (RDS(on)) is typically 0.028 Ohms at VGS = -10V and 0.045 Ohms at VGS = -4.5V. The gate threshold voltage (VGS(th)) is between -1V and -3V. The device is available in an SO-8 package.