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Same model may have multiple batches, images only for reference.
IRF7341TRPBFXTMA1
Same model may have multiple batches, images only for reference.

IRF7341TRPBFXTMA1

Part No IRF7341TRPBFXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 4.7A (Tc)
Rds On (Max) @ Id, Vgs 50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
Power - Max 2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8-902
Ultra Librarian 3D Model Ultra Librarian IRF7341TRPBFXTMA1 CAD Model

Description

MOSFET 2N-CH 55V 4.7A 8DSO-902

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Quantity Unit Price Ext. Price
240+ $0.2123 $50.9520
505+ $0.1989 $100.4445
785+ $0.1921 $150.7985
1,120+ $0.1787 $200.1440
1,455+ $0.1720 $250.2600
1,815+ $0.1653 $300.0195
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