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Same model may have multiple batches, images only for reference.
IRF6668TR1PBF Real Image
Same model may have multiple batches, images only for reference.

IRF6668TR1PBF

Part No IRF6668TR1PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 80V 55A DIRECTFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 80V
Id - Continuous Drain Current 55A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 15mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.9V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 31nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1320pF at 25V
Power Dissipation (Maximum) 2.8W, 89W
Temperature Range - Operating -40°C ~ 150°C
Mounting Style SMD
Supplier Device Package DIRECTFET MZ
Manufacturer Package DirectFET Isometric MZ
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 714548-IRF6668TR1PBF
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6668TR1PBF CAD Model

Description

The Infineon Technologies IRF6668TR1PBF is an N-channel MOSFET power switch designed for discrete semiconductor applications.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-Channel
  • Application: Discrete Semiconductor
  • Package: Reel
  • Mounting Style: SMT
  • Family: DirectFET MZ
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 55A
  • Gate Charge (Qg) (maximum) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 1320pF @ 25V
  • Supply and Demand Status: Balanced

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105+ $0.9553 $100.3065
165+ $0.9254 $152.6910
225+ $0.8956 $201.5100
290+ $0.8657 $251.0530
390+ $0.7762 $302.7180
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