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Same model may have multiple batches, images only for reference.
IRF6609 Real Image
Same model may have multiple batches, images only for reference.

IRF6609

Part No IRF6609
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 20V 31A DIRECTFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 31A, 150A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 2mOhm at 31A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.45V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 69nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 6290pF at 10V
Power Dissipation (Maximum) 1.8W, 89W
Temperature Range - Operating -40°C ~ 150°C
Mounting Style SMD
Supplier Device Package DIRECTFET MT
Manufacturer Package DirectFET Isometric MT
Manufacturer Pack Quantity 1
MSL Level 3 (168 Hours)
Win Source Part Number 1187135-IRF6609
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF6609 CAD Model

Description

The Infineon Technologies IRF6609 is an N-Channel MOSFET with a drain-source breakdown voltage of 20V and continuous drain current of 31A.

  • Product Status: obsolete
  • Supply and Demand Status: limited
  • Package: DirectFET Isometric MT
  • Maximum Power Dissipation: 1.8W and 89W
  • Input Capacitance: 6290pF @ 10V
  • Gate Charge: 69nC @ 4.5V

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47+ $2.4714 $116.1558
73+ $2.3941 $174.7693
100+ $2.3169 $231.6900
129+ $2.2397 $288.9213
173+ $2.0080 $347.3840
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