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IRF6601

Part No IRF6601
Manufacturer Infineon Technologies
Catalog FETs - Single
Description DirectFET™ Power MOSFET(Vdss=20V) | MOSFET N-CH 20V 26A DIRECTFET
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Tape (CT)
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 26A, 85A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 3.8mOhm at 26A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 45nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3440pF at 15V
Power Dissipation (Maximum) 3.6W, 42W
Temperature Range - Operating -40°C ~ 150°C
Mounting Style SMD
Supplier Device Package DIRECTFET MT
Manufacturer Package DirectFET Isometric MT
Manufacturer Pack Quantity 1
MSL Level 3 (168 Hours)
Win Source Part Number 1187133-IRF6601
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6601 CAD Model

Description

The Infineon IRF6601 is an obsolete MOSFET transistor with medium popularity and a balanced supply and demand status. It features a DirectFET MT package and a gate-source voltage of ±20V.

  • Gate-Source Voltage: ±20V
  • Maximum Gate-Source Voltage: 2.2V @ 250μA
  • Gate Charge: 45nC @ 4.5V
  • Maximum Input Capacitance: 3440pF @ 15V
  • Drive Voltage: 4.5V and 10V
  • Continuous Drain Current: 26A and 85A
  • Maximum Rds On: 3.8mOhm @ 26A, 10V
  • Manufacturer: Infineon Technologies
  • Availability: Available from Win Source

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,580 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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