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Same model may have multiple batches, images only for reference.
IRF5810TR Real Image
Same model may have multiple batches, images only for reference.

IRF5810TR

Part No IRF5810TR
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET 2P-CH 20V 2.9A 6-TSOP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Packaging Reel
Part Status Obsolete (End Of Life)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 2.9A
Rds On (Maximum) at Id, Vgs 90mOhm at 2.9A, 4.5V
Vgs(th) (Maximum) at Id 1.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 9.6nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 650pF at 16V
Power - Max 960mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806185-IRF5810TR
Ultra Librarian 3D Model Ultra Librarian IRF5810TR CAD Model

Description

The Infineon Technologies 806185-IRF5810TR is a P-Channel FET with a logic level gate.

  • Maximum Power: 960mW
  • Maximum Drain to Source Voltage: 20V
  • Package: 6-TSOP
  • Temperature Range: -55°C to 150°C
  • Maximum Rds On: 90mOhm @ 2.9A and 4.5V
  • Maximum Gate Charge: 9.6nC @ 4.5V
  • Maximum Input Capacitance: 650pF @ 16V
  • Continuous Drain Current: 2.9A
  • Maximum Vgs(th): 1.2V @ 250μA

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