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IRF5210SPBF Real Image IRF5210SPBF real image11736 IRF5210SPBF Real Image
Same model may have multiple batches, images only for reference.
IRF5210SPBF Real Image IRF5210SPBF real image11736 IRF5210SPBF Real Image
IRF5210SPBF Real Image IRF5210SPBF real image11736 IRF5210SPBF Real Image
Same model may have multiple batches, images only for reference.

IRF5210SPBF

Part No IRF5210SPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET P-CH 100V 38A D2PAK
Datasheet
IRF5210SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 38A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 60mOhm at 38A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 230nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2780pF at 25V
Power Dissipation (Maximum) 3.1W, 170W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187038-IRF5210SPBF
Manufacturer Homepage www.irf.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management
Family Name IRF5210
Introduction Date May 22, 2006
ECCN EAR99
Country of Origin China ,Republic of Korea
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IRF5210SPBF CAD Model

Description

The Infineon Technologies IRF5210SPBF is a P-Channel MOSFET transistor designed for power management applications.

  • Maximum Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 38A
  • Maximum Rds On: 60mOhm @ 38A and 10V
  • Gate Charge (Qg): 230nC @ 10V
  • Gate-Source Voltage (th): 4V @ 250μA
  • Input Capacitance (Ciss): 2780pF @ 25V
  • Package: D2PAK
  • Power Dissipation: 3.1W and 170W
  • Operating Temperature Range: Between -55°C and 150°C
  • Popularity: High
  • Supply and Demand: Limited
  • Halogen-Free: Compliant
  • Manufactured in: China and the Republic of Korea

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125+ $0.8053 $100.6625
195+ $0.7781 $151.7295
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