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Same model may have multiple batches, images only for reference.
IRF40H233ATMA1
Same model may have multiple batches, images only for reference.

IRF40H233ATMA1

Part No IRF40H233ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 35A 8PQFN / Mosfet Array 2 N-Channel (Dual) 40V 65A (Tc) 3.8W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-4
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Infineon Technologies
Series StrongIRFET™
Package Tape & Reel (TR)
Product Status Last Time Buy
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Rds On (Max) @ Id, Vgs 6.2mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 20V
Power - Max 3.8W (Ta), 50W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4
Base Product Number IRF40
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-IRF40H233ATMA1TR,SP005537810
Standard Package 4,000
Win Source Part Number 1065488-IRF40H233ATMA1
Ultra Librarian 3D Model Ultra Librarian IRF40H233ATMA1 CAD Model

Description

The Infineon Technologies IRF40H233ATMA1 is a dual N-Channel MOSFET that belongs to the StrongIRFET series.

  • Package: Tape and reel
  • Standard Package: 4,000 units
  • FET Feature: Standard
  • Drain to Source Voltage: 40V
  • Continuous Drain Current @ 25°C: 65A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
  • HTSUS: 8541.29.0095
  • Win Source Part Number: 1065488-IRF40H233ATMA1

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