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IRF2807ZS

Part No IRF2807ZS
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Advanced Process Technology | MOSFET N-CH 75V 75A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 75A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 9.4mOhm at 53A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3270pF at 25V
Power Dissipation (Maximum) 170W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186942-IRF2807ZS
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF2807ZS CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel transistor with a drain-source breakdown voltage of 75V and continuous drain current of 75A.

  • Channel Type: N-Channel
  • Voltage - Drain-Source Breakdown (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 75A
  • Rds On (Maximum) @ Id, Vgs: 9.4mOhm @ 53A, 10V
  • Vgs(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 3270pF @ 25V
  • Product Status: Obsolete
  • Power Dissipation (Maximum): 170W
  • Package / Case: D2PAK, TO-263-3, TO-263AB
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Operating Temperature: -55°C to 175°C
  • Category: Discrete Semiconductor Products

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