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Same model may have multiple batches, images only for reference.
IRF1010ZS Real Image
Same model may have multiple batches, images only for reference.

IRF1010ZS

Part No IRF1010ZS
Manufacturer Infineon Technologies
Catalog FETs - Single
Description AUTOMOTIVE MOSFET | MOSFET N-CH 55V 75A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 75A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 7.5mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 95nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2840pF at 25V
Power Dissipation (Maximum) 140W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186873-IRF1010ZS
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1010ZS CAD Model

Description

The Infineon IRF1010ZS is a high-performance N-Channel MOSFET that is designed for use in a variety of applications.

  • Drain-Source Voltage: 55V
  • Continuous Drain Current: 75A
  • Package: TO-263-3
  • Maximum Power Dissipation: 140W
  • On-Resistance: 7.5mOhm @ 75A and 10V
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 2840pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
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