The Infineon IPI90N04S4-02T is a high-performance OptiMOS™ power MOSFET designed for high-efficiency switching applications. It is an N-channel enhancement mode MOSFET that offers a low on-resistance (RDS(on)) and excellent switching performance. The device is packaged in a PG-TO262-3 package.

Applications:

• Synchronous Rectification in AC/DC power supplies
• DC/DC converters
• Power Tools
• Motor Control
• Automotive Applications (e.g., Body Control Modules)

Features:

• N-channel, enhancement mode
• Low on-resistance RDS(on)
• Avalanche rated
• Fast switching speeds
• 100% Avalanche tested
• Pb-free plating, RoHS compliant

Benefits:

• High Efficiency: The low RDS(on) reduces conduction losses, maximizing overall efficiency in power conversion circuits.
• Improved Thermal Performance: Efficient heat dissipation due to the package design helps to maintain lower operating temperatures.
• Reduced Power Dissipation: Lower on-resistance leads to reduced heat generation, improving system reliability and longevity.
• Robustness: Avalanche rating ensures the device can withstand voltage transients.
• Ease of Use: Designed for simple integration into various power electronics designs.

Technical Specifications:

The IPI90N04S4-02T has a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of up to 90A (depending on cooling conditions). The typical on-resistance (RDS(on)) is very low, contributing to its high efficiency. The gate threshold voltage is optimized for fast switching and efficient operation. The operating junction temperature range is specified from -55°C to +175°C. The packaging is PG-TO262-3, a through-hole package suitable for various mounting configurations.

The OptiMOS™ technology provides superior switching performance and efficiency, making this MOSFET ideal for high-power and high-frequency applications.