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IPI037N08N3GXKSA1

Part No IPI037N08N3GXKSA1
Manufacturer Infineon Technologies
Catalog OEM Souring
Description MOSFET N-CH 80V 100A TO262-3
Sample
Rohs State rohs
ECAD Module
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Category OEM Souring
Win Source Part Number 1463507-IPI037N08N3GXKSA1
Manufacturer Infineon Technologies
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.75 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8110 pF @ 40 V
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Ultra Librarian 3D Model Ultra Librarian IPI037N08N3GXKSA1 CAD Model

Description

The IPI037N08N3GXKSA1 is a powerful N-CHANNEL MOSFET produced by Infineon/Qimonda, designed for applications demanding high efficiency and power handling capacity. With a voltage rating of 80V and capable of conducting up to 100A, this MOSFET is ideal for a variety of power conversion applications, such as DC-DC converters, motor drives, and power management systems in automotive and industrial electronics. The device's TO262-3 package allows for efficient heat dissipation and compact design, facilitating integration into a wide range of electronic circuits. Infineon/Qimonda's expertise in semiconductor manufacturing ensures that the IPI037N08N3GXKSA1 offers superior performance, low on-resistance, and high reliability, making it an excellent choice for engineers looking to optimize their power electronic systems.

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