The Infineon Technologies 131447-IPD180N10N3 G is a high-quality MOSFET component designed for use in discrete semiconductor products.

• Type: N-Channel MOSFET
• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current: 43A (Tc) @ 25°C
• Power Dissipation: 71W
• Gate-Source Threshold Voltage: 3.5V @ 33μA
• Maximum Gate Charge: 25nC @ 10V
• Maximum Rds On @ Id,Vgs: 18 mOhm @ 33A, 10V
• Package: TO-252-3, DPak (2 Leads + Tab), SC-63
• Mounting: SMD/SMT technology
• Suitable for: Use in a wide range of applications, including power supplies, motor control, and lighting