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Same model may have multiple batches, images only for reference.
IMW65R072M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMW65R072M1HXKSA1

Part No IMW65R072M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET 650V NCH SIC TRENCH
Datasheet
IMW65R072M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202688-IMW65R072M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSIC™ M1
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Ultra Librarian 3D Model Ultra Librarian IMW65R072M1HXKSA1 CAD Model

Description

The Infineon Technologies 1202688 is a high-performance N-channel SiCFET (Silicon Carbide) transistor from the CoolSIC™ M1 series.

  • Drain-to-Source Voltage (Vdss): 650V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Mounting Type: through-hole
  • Supplier Device Package: PG-TO247-3-41
  • Status: active product

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