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Same model may have multiple batches, images only for reference.
IMBG65R163M1HXTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMBG65R163M1HXTMA1

Part No IMBG65R163M1HXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET PG-TO263-
Datasheet
IMBG65R163M1HXTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202798-IMBG65R163M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSIC™ M1
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Ultra Librarian 3D Model Ultra Librarian IMBG65R163M1HXTMA1 CAD Model

Description

The Infineon Technologies 1202798 is a high-performance N-Channel SiCFET (Silicon Carbide) transistor from the CoolSIC™ M1 series.

  • Channel Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Series: CoolSIC™ M1
  • Drain to Source Voltage (Vdss): Up to 650V
  • Mounting Type: Surface Mount
  • Operating Temperature Range (TJ): -55°C to 175°C
  • Package: Tape & Reel (TR) Cut Tape (CT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.2469 $51.9504
38+ $2.6641 $101.2358
59+ $2.5808 $152.2672
81+ $2.4976 $202.3056
104+ $2.4143 $251.0872
139+ $2.1646 $300.8794
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Availability: 90 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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