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Same model may have multiple batches, images only for reference.
IMBG65R072M1HXTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMBG65R072M1HXTMA1

Part No IMBG65R072M1HXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET PG-TO263-
Datasheet
IMBG65R072M1HXTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202948-IMBG65R072M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series CoolSIC™ M1
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Base Product Number IMBG65R
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 18 V
Ultra Librarian 3D Model Ultra Librarian IMBG65R072M1HXTMA1 CAD Model

Description

The Infineon Technologies CoolSIC™ M1 is a N-Channel MOSFET with a drain to source voltage (Vdss) of 650 V.

  • Gate Charge (Qg): 22 nC @ 18 V
  • Package Type: Tape & Reel (TR) Cut Tape (CT)
  • Technology: SiCFET (Silicon Carbide)
  • Manufacturer: Infineon Technologies
  • Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
  • Status: Active
  • Suitable for: Various applications in power electronics, such as motor drives, solar inverters, and electric vehicles.

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