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Same model may have multiple batches, images only for reference.
IKW75N60TFKSA1 Real Image
Same model may have multiple batches, images only for reference.

IKW75N60TFKSA1

Part No IKW75N60TFKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 80A 428W TO247-3
Datasheet
IKW75N60TFKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 225A
Collector-emitter saturation voltage(Max) 2V @ 15V, 75A
Maximum Power Dissipation 428W
Total Switching Energy(Ets) 4.5mJ
Input Type Standard
Gate Charge 470nC
Turn-on and Turn-off delay time 33ns/330ns
Testing Conditions 400V, 75A, 5 Ohm, 15V
Reverse Recovery Time (trr) 121ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 120964-IKW75N60TFKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IKW75N60TFKSA1 CAD Model

Description

The Infineon Technologies 120964-IKW75N60TFKSA1 is an IGBT transistor with a maximum current collector of 80A and a maximum power dissipation of 428W.

  • Maximum Current Collector: 80A
  • Maximum Power Dissipation: 428W
  • Reverse Recovery Time: 121ns
  • Technology: Trench Field Stop
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Pulsed Collector Current: 225A
  • Collector-Emitter Saturation Voltage at Maximum: 2V @ 15V, 75A
  • Turn-On Delay Time: 33ns
  • Turn-Off Delay Time: 330ns
  • Package: PG-TO247-3
  • Input Type: Standard

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