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IKW30N65WR5

Part No IKW30N65WR5
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Reverse conducting IGBT with monolithic body diode
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1185371-IKW30N65WR5
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IKW30N65WR5 CAD Model

Description

The IKW30N65WR5 is a discrete Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, designed for use in high-efficiency power switching applications. This IGBT combines the benefits of both MOSFETs and bipolar transistors, offering efficient switching with low conduction losses. The "WR5" series signifies specific improvements in performance characteristics.

Applications

  • Solar Inverters: Used in solar power inverters to convert DC power from solar panels to AC power for grid connection.
  • Uninterruptible Power Supplies (UPS): Employed in UPS systems to provide backup power during power outages.
  • Welding Equipment: Found in welding machines for precise control of welding current and voltage.
  • Industrial Motor Drives: Used in motor drives for controlling the speed and torque of electric motors.
  • Induction Heating Systems: Used in induction heating applications for efficient heating of metals.

Features

  • Blocking Voltage: 650V
  • Continuous Collector Current: 30A
  • Short-Circuit Withstand Time: High short-circuit ruggedness for improved reliability.
  • TRENCHSTOP™ 5 Technology: Optimized trench field-stop technology for low VCE(sat).
  • Gate-Emitter Voltage: +/- 20V

Benefits

  • High Efficiency: Reduces power losses due to low VCE(sat) and fast switching.
  • Improved System Reliability: High short-circuit withstand capability ensures robust operation.
  • Simplified Design: Easy to drive and control.
  • Increased Power Density: Enables smaller and more compact power electronic systems.
  • Reduced Cooling Requirements: Lower power losses result in less heat generation.

Additional Details

The IKW30N65WR5 IGBT utilizes Infineon’s TRENCHSTOP™ 5 technology, resulting in a low collector-emitter saturation voltage (VCE(sat)), which minimizes conduction losses. It boasts a high short-circuit withstand time, enhancing the overall robustness and reliability of the application. The IGBT is designed for switching frequencies up to several tens of kHz. It's available in a TO-247 package. The IKW30N65WR5 is suitable for a wide range of power electronic applications requiring high efficiency and reliability, such as those mentioned above. The optimized trench structure and field-stop technology ensure efficient switching behavior with reduced gate charge, contributing to overall system efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2243 $51.1589
55+ $1.8251 $100.3805
85+ $1.7681 $150.2885
117+ $1.7110 $200.1870
152+ $1.6540 $251.4080
203+ $1.4829 $301.0287
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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