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Same model may have multiple batches, images only for reference.
IKW30N60H3FKSA1 Real Image
Same model may have multiple batches, images only for reference.

IKW30N60H3FKSA1

Part No IKW30N60H3FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 60A 187W TO247-3
Datasheet
IKW30N60H3FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 30A
Maximum Power Dissipation 187W
Total Switching Energy(Ets) 1.38mJ
Input Type Standard
Gate Charge 165nC
Turn-on and Turn-off delay time 21ns/207ns
Testing Conditions 400V, 30A, 10.5 Ohm, 15V
Reverse Recovery Time (trr) 38ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 141963-IKW30N60H3FKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IKW30N60H3FKSA1 CAD Model

Description

The Infineon Technologies IKW30N60H3FKSA1 is a Trench Field Stop IGBT type semiconductor device designed for use in various applications including power supplies, motor control, and welding equipment.

  • Maximum Collector Current: 60A
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 187W
  • Temperature Range: -40°C to 175°C (TJ)
  • Package: PG-TO247-3
  • Gate Charge: 165nC
  • Collector-Emitter Saturation Voltage: 2.4V @ 15V, 30A
  • Total Switching Energy (Ets): 1.38mJ
  • Turn-On and Turn-Off Delay Time: 21ns/207ns

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80+ $1.4738 $117.9040
125+ $1.4276 $178.4500
170+ $1.3814 $234.8380
220+ $1.3352 $293.7440
290+ $1.1977 $347.3330
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