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Same model may have multiple batches, images only for reference.
IKP08N65H5XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IKP08N65H5XKSA1

Part No IKP08N65H5XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 650V 18A 70W PG-TO220-3
Datasheet
IKP08N65H5XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 650V
Maximum Current Collector 18A
Pulsed Collector Current 24A
Collector-emitter saturation voltage(Max) 2.1V @ 15V, 8A
Maximum Power Dissipation 70W
Total Switching Energy(Ets) 70μJ (on), 30μJ (off)
Input Type Standard
Gate Charge 22nC
Turn-on and Turn-off delay time 11ns/115ns
Testing Conditions 400V, 4A, 48 Ohm, 15V
Reverse Recovery Time (trr) 40ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Win Source Part Number 1045277-IKP08N65H5XKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IKP08N65H5XKSA1 CAD Model

Description

The IKP08N65H5XKSA1 is an electronic component manufactured by Infineon Technologies.

  • Package: TO-220-3
  • Mounting: Through-hole
  • Reverse Recovery Time (trr): 40ns
  • Gate Charge: 22nC
  • Maximum Current Collector: 18A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
  • Maximum Power Dissipation: 70W
  • Pulsed Collector Current: 24A
  • Collector-Emitter Saturation Voltage (Max): 2.1V @ 15V, 8A
  • Total Switching Energy (Ets): 70μJ (on), 30μJ (off)
  • Turn-On and Turn-Off Delay Time: 11ns/115ns
  • Testing Conditions: 400V, 4A, 48 Ohm, 15V
  • Supply and Demand Status: Limited

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