The Infineon IKFW75N65EH5XKSA1 is a Trench Field Stop IGBT type transistor with a voltage - collector emitter breakdown (Max) of 650 V and a power of 148 W.

• Manufacturer: Infineon
• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Power: 148 W
• Reverse Recovery Time (trr): 75 ns
• Current - Collector Pulsed (Icm): 240 A
• Switching Energy: 1.8mJ (on) , 600μJ (off)
• Package/Case: TO-247-3
• Temperature Range: -40°C ~ 175°C (TJ)
• Current - Collector (Ic) (Max): 80 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A