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Same model may have multiple batches, images only for reference.
IKD10N60RFATMA1 Real Image
Same model may have multiple batches, images only for reference.

IKD10N60RFATMA1

Part No IKD10N60RFATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 20A 150W PG-TO252-3
Datasheet
IKD10N60RFATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 20A
Pulsed Collector Current 30A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 10A
Maximum Power Dissipation 150W
Total Switching Energy(Ets) 190μJ (on), 160μJ (off)
Input Type Standard
Gate Charge 64nC
Turn-on and Turn-off delay time 12ns/168ns
Testing Conditions 400V, 10A, 26 Ohm, 15V
Reverse Recovery Time (trr) 72ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Win Source Part Number 1045271-IKD10N60RFATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IKD10N60RFATMA1 CAD Model

Description

The Infineon Technologies IKD10N60RFATMA1 is an IGBT transistor used in a variety of applications.

  • Current Collector: 20A
  • Collector-Emitter Breakdown Voltage: 600V
  • Temperature Range: -40°C to 175°C
  • Maximum Power Dissipation: 150W
  • Popular choice due to: its balance of performance and affordability

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