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IKD06N60RFATMA1

Name: IKD06N60RFATMA1
Brand: Infineon Technologies
SKU: 156388
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IKD06N60RFATMA1
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	IGBT 600V 12A 100W PG-TO252-3
Datasheet	IKD06N60RFATMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
IGBT Type	Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage	600V
Maximum Current Collector	12A
Pulsed Collector Current	18A
Collector-emitter saturation voltage(Max)	2.5V @ 15V, 6A
Maximum Power Dissipation	100W
Total Switching Energy(Ets)	90μJ (on), 90μJ (off)
Input Type	Standard
Gate Charge	48nC
Turn-on and Turn-off delay time	7ns/106ns
Testing Conditions	400V, 6A, 23 Ohm, 15V
Reverse Recovery Time (trr)	48ns
Temperature Range - Operating	-40°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO252-3
Win Source Part Number	103291-IKD06N60RFATMA1
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IKD06N60RFATMA1 CAD Model

Description

The Infineon Technologies 103291-IKD06N60RFATMA1 is a Trench Field Stop IGBT with a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 12A.

Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Collector Current: 12A
Package: PG-TO252-3
Maximum Power Dissipation: 100W
Reverse Recovery Time: 48ns
Gate Charge: 48nC
Turn-On and Turn-Off Delay Time: 7ns/106ns
Total Switching Energy: 90μJ (on), 90μJ (off)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
70+	$0.8498	$59.4860
170+	$0.6973	$118.5410
260+	$0.6754	$175.6040
355+	$0.6537	$232.0635
460+	$0.6319	$290.6740
615+	$0.5666	$348.4590

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 86,000 pieces

MOQ: 70 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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