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Same model may have multiple batches, images only for reference.
IKD04N60RATMA1 Real Image
Same model may have multiple batches, images only for reference.

IKD04N60RATMA1

Part No IKD04N60RATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 8A 75W TO252
Datasheet
IKD04N60RATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 8A
Pulsed Collector Current 12A
Collector-emitter saturation voltage(Max) 2.1V @ 15V, 4A
Maximum Power Dissipation 75W
Total Switching Energy(Ets) 90μJ (on), 150μJ (off)
Input Type Standard
Gate Charge 27nC
Turn-on and Turn-off delay time 14ns/146ns
Testing Conditions 400V, 4A, 43 Ohm, 15V
Reverse Recovery Time (trr) 43ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Win Source Part Number 125022-IKD04N60RATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IKD04N60RATMA1 CAD Model

Description

The IKD04N60RATMA1 is a surface mount IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 75W
  • Reverse Recovery Time (trr): 43ns
  • Gate Charge: 27nC
  • Testing Conditions: 400V, 4A, 43 Ohm, and 15V
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8357 $50.1420
150+ $0.6858 $102.8700
230+ $0.6643 $152.7890
315+ $0.6429 $202.5135
405+ $0.6215 $251.7075
540+ $0.5572 $300.8880
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Availability: 387 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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