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Same model may have multiple batches, images only for reference.
IHW20N120R5XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IHW20N120R5XKSA1

Part No IHW20N120R5XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 40A 288W TO247 / Trans IGBT Chip N-CH 1200V 40A 288000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
IHW20N120R5XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series TrenchStop
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 40A
Current - Collector Pulsed (Icm) 60A
Vce(on) (Maximum) @ Vge, Ic 1.75V @ 15V, 20A
Power - Max 288W
Switching Energy 750μJ (off)
Input Type Standard
Gate Charge 170nC
Td (on/off) @ 25°C -/260ns
Test Condition 600V, 20A, 10 Ohm, 15V
Operating Temperature Range -40°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package PG-TO247-3
Win Source Part Number 776725-IHW20N120R5XKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IHW20N120R5
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian IHW20N120R5XKSA1 CAD Model

Description

The Infineon Technologies IHW20N120R5XKSA1 is a TrenchStop series MOSFET designed for high power applications.

  • Voltage Breakdown: 1200V
  • Collector Current: 40A
  • Package: TO-247-3
  • Mounting: Through-hole
  • Gate Charge: 170nC
  • Switching Energy: 750μJ (off)
  • Temperature Range (TJ): -40°C to 175°C
  • Power Dissipation: 288W
  • Family Name: IHW20N120R5
  • Package: PG-TO247-3
  • Supply and Demand Status: Limited
  • Available in: Tube

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